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RFD16N06LESM9A

Fairchild Semiconductor

Product No:

RFD16N06LESM9A

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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RFD16N06LESM9A - Product Information

Parameter Info

User Guide

Mfr Fairchild Semiconductor
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) +10V, -8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
Power Dissipation (Max) 90W (Tc)
Supplier Device Package TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)