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RFD16N02L

Harris Corporation

Product No:

RFD16N02L

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I-PAK

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Description:

16A, 20V, 0.022 OHM, N-CHANNEL L

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	22mOhm @ 16A, 5V
Power Dissipation (Max)	90W (Tc)
Supplier Device Package	I-PAK
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)