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Harris Corporation
Product No:
RF1S50N06LESM
Manufacturer:
Package:
TO-263AB
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
307
$0.931
$285.817
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Mfr | Harris Corporation |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 22mOhm @ 50A, 5V |
Power Dissipation (Max) | 142W (Tc) |
Supplier Device Package | TO-263AB |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |