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RF1S50N06LESM

Harris Corporation

Product No:

RF1S50N06LESM

Manufacturer:

Harris Corporation

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1705

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 307

    $0.931

    $285.817

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RF1S50N06LESM - Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 5V
Power Dissipation (Max) 142W (Tc)
Supplier Device Package TO-263AB
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)