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RF1S4N100SM9A

Harris Corporation

Product No:

RF1S4N100SM9A

Manufacturer:

Harris Corporation

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 1000V 4.3A TO263AB

Quantity:

Delivery:

Payment:

In Stock : 187

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 89

    $3.2205

    $286.6245

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RF1S4N100SM9A - Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package TO-263AB
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)