Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PSMN8R5-100ESQ

Nexperia USA Inc.

Product No:

PSMN8R5-100ESQ

Manufacturer:

Nexperia USA Inc.

Package:

I2PAK

Batch:

-

Datasheet:

-

Description:

NEXPERIA PSMN8R5-100ESQ - 100A,

Quantity:

Delivery:

Payment:

In Stock : 36282

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 486

    $0.589

    $286.254

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

PSMN8R5-100ESQ - Product Information

Parameter Info

User Guide

Mfr Nexperia USA Inc.
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Power Dissipation (Max) 263W (Tc)
Supplier Device Package I2PAK
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)