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PSMN8R0-30YLC115

NXP USA Inc.

Product No:

PSMN8R0-30YLC115

Manufacturer:

NXP USA Inc.

Package:

LFPAK56, Power-SO8

Batch:

-

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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PSMN8R0-30YLC115 - Product Information

Parameter Info

User Guide

Mfr NXP USA Inc.
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Product Status Active
Vgs(th) (Max) @ Id 1.95V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V
Power Dissipation (Max) 42W (Tc)
Supplier Device Package LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 848 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)