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PSMN2R0-60ES,127

NXP Semiconductors

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PSMN2R0-60ES,127

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I2PAK

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NEXPERIA PSMN2R0-60ES - 120A, 60

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Mfr	NXP Semiconductors
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	PSMN2R0
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.2mOhm @ 25A, 10V
Power Dissipation (Max)	338W (Tc)
Supplier Device Package	I2PAK
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	9997 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)