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PSMN1R1-30PL,127

NXP Semiconductors

Product No:

PSMN1R1-30PL,127

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Package:

TO-220AB

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Description:

NEXPERIA PSMN1R1-30PL - 120A, 30

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Mfr	NXP Semiconductors
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	1.3mOhm @ 25A, 10V
Power Dissipation (Max)	338W (Tc)
Supplier Device Package	TO-220AB
Gate Charge (Qg) (Max) @ Vgs	243 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	14850 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)