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PSMN130-200D,118-NEX

Nexperia USA Inc.

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DPAK

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Description:

POWER FIELD-EFFECT TRANSISTOR, 2

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Mfr	Nexperia USA Inc.
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 25A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)