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PQMH9Z

NXP Semiconductors

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PQMH9Z

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DFN1010B-6

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Description:

Digital BJT 2 NPN - Pre-Biased (

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Mfr	NXP Semiconductors
Series	Automotive, AEC-Q101
Package	Bulk
Power - Max	230mW
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Product Status	Active
Transistor Type	2 NPN - Pre-Biased
Resistor - Base (R1)	10kOhms
Frequency - Transition	230MHz
Supplier Device Package	DFN1010B-6
Resistor - Emitter Base (R2)	47kOhms
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V