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PMXB360ENEAZ

NXP USA Inc.

Product No:

PMXB360ENEAZ

Manufacturer:

NXP USA Inc.

Package:

DFN1010D-3

Batch:

-

Datasheet:

Description:

PMXB360ENEA - 80 V, N-CHANNEL TR

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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PMXB360ENEAZ - Product Information

Parameter Info

User Guide

Mfr NXP USA Inc.
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Supplier Device Package DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)