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PMXB350UPEZ

NXP Semiconductors

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PMXB350UPEZ

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Package:

DFN1010D-3

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NEXPERIA PMXB350UPE - 20 V, P-CH

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Mfr	NXP Semiconductors
Series	-
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	447mOhm @ 1.2A, 4.5V
Power Dissipation (Max)	360mW (Ta), 5.68W (Tc)
Supplier Device Package	DFN1010D-3
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	116 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)