Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NXP USA Inc.
Product No:
PMPB40SNA115
Manufacturer:
Package:
DFN2020MD-6
Batch:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1000
$0.304
$304
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 43mOhm @ 4.8A, 10V |
Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
Supplier Device Package | DFN2020MD-6 |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |