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PMPB40SNA115

NXP USA Inc.

Product No:

PMPB40SNA115

Manufacturer:

NXP USA Inc.

Package:

DFN2020MD-6

Batch:

-

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1000

    $0.304

    $304

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PMPB40SNA115 - Product Information

Parameter Info

User Guide

Mfr NXP USA Inc.
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 43mOhm @ 4.8A, 10V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Supplier Device Package DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 612 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12.9A (Tc)