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PHD34NQ10T,118

NXP USA Inc.

Product No:

PHD34NQ10T,118

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DPAK

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Description:

MOSFET N-CH 100V 35A DPAK

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Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	PHD34
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	40mOhm @ 17A, 10V
Power Dissipation (Max)	136W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1704 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)