Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PHD18NQ10T,118

NXP USA Inc.

Product No:

PHD18NQ10T,118

Manufacturer:

Package:

DPAK

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 18A DPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	PHD18
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	90mOhm @ 9A, 10V
Power Dissipation (Max)	79W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)