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PHD108NQ03LT,118

NXP USA Inc.

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PHD108NQ03LT,118

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DPAK

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Description:

MOSFET N-CH 25V 75A DPAK

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Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Base Product Number	PHD10
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	6mOhm @ 25A, 10V
Power Dissipation (Max)	187W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	16.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)	25 V
Input Capacitance (Ciss) (Max) @ Vds	1375 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)