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PHB18NQ10T,118

NXP USA Inc.

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PHB18NQ10T,118

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Package:

D2PAK

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Description:

MOSFET N-CH 100V 18A D2PAK

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In Stock : 1966

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Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	90mOhm @ 9A, 10V
Power Dissipation (Max)	79W (Tc)
Supplier Device Package	D2PAK
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)