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PBSS5230QAZ

NXP Semiconductors

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PBSS5230QAZ

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Package:

DFN1010D-3

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Description:

NEXPERIA PBSS5230QA - 30 V, 2 A

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Mfr	NXP Semiconductors
Series	-
Package	Bulk
Power - Max	325 mW
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Product Status	Active
Transistor Type	PNP
Operating Temperature	150°C (TJ)
Frequency - Transition	170MHz
Supplier Device Package	DFN1010D-3
Vce Saturation (Max) @ Ib, Ic	210mV @ 50mA, 1A
Current - Collector (Ic) (Max)	2 A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max)	30 V