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WeEn Semiconductors
Product No:
NXPSC04650XQ
Manufacturer:
Package:
TO-220F
Batch:
-
Description:
DIODE SIL CARBIDE 650V 4A TO220F
Quantity:
Delivery:
Payment:
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Mfr | WeEn Semiconductors |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 Full Pack, Isolated Tab |
Product Status | Obsolete |
Base Product Number | NXPSC |
Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
Supplier Device Package | TO-220F |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Operating Temperature - Junction | 175°C (Max) |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |