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NXH040P120MNF1PTG

onsemi

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NXH040P120MNF1PTG

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PIM F1 SIC HALFBRIDGE 1200V 40MO

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Mfr	onsemi
Series	-
Package	Tray
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	74W
Configuration	2 N-Channel (Dual) Common Source
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 10mA
Base Product Number	NXH040
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	56mOhm @ 25A, 20V
Supplier Device Package	-
Gate Charge (Qg) (Max) @ Vgs	122.1nC @ 20V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	1505pF @ 800V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)