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NXH010P120MNF1PNG

onsemi

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NXH010P120MNF1PNG

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PIM F1 SIC HALFBRIDGE 1200V 10MO

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Mfr	onsemi
Series	-
Package	Tray
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	250W (Tj)
Configuration	2 N-Channel (Dual)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 40mA
Base Product Number	NXH010
Operating Temperature	-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	14mOhm @ 100A, 20V
Supplier Device Package	-
Gate Charge (Qg) (Max) @ Vgs	454nC @ 20V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	4707pF @ 800V
Current - Continuous Drain (Id) @ 25°C	114A (Tc)