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NP33N06YDG-E1-AY

Renesas Electronics America Inc

Product No:

NP33N06YDG-E1-AY

Package:

8-HSON

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 33A 8HSON

Quantity:

Delivery:

Payment:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 2500

    $0.813466

    $2033.665

  • 5000

    $0.783332

    $3916.66

  • 12500

    $0.753208

    $9415.1

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NP33N06YDG-E1-AY - Product Information

Parameter Info

User Guide

Mfr Renesas Electronics America Inc
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number NP33N06
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 14mOhm @ 16.5A, 10V
Power Dissipation (Max) 1W (Ta), 97W (Tc)
Supplier Device Package 8-HSON
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)