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MT3S113(TE85L,F)

Toshiba Semiconductor and Storage

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MT3S113(TE85L,F)

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S-Mini

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Description:

RF TRANS NPN 5.3V 12.5GHZ SMINI

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Mfr	Toshiba Semiconductor and Storage
Gain	11.8dB
Series	-
Package	Tape & Reel (TR)
Power - Max	800mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Transistor Type	NPN
Base Product Number	MT3S113
Operating Temperature	150°C (TJ)
Frequency - Transition	12.5GHz
Supplier Device Package	S-Mini
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)	5.3V