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MSCSM170HM23CT3AG

Microchip Technology

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MSCSM170HM23CT3AG

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PM-MOSFET-SIC-SBD-SP3F

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Mfr	Microchip Technology
Series	-
Package	Bulk
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	602W (Tc)
Configuration	4 N-Channel (Full Bridge)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	3.2V @ 5mA
Base Product Number	MSCSM170
Operating Temperature	-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	22.5mOhm @ 60A, 20V
Supplier Device Package	-
Gate Charge (Qg) (Max) @ Vgs	356nC @ 20V
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 1000V
Current - Continuous Drain (Id) @ 25°C	124A (Tc)