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MSCSM120DDUM16TBL3NG

Microchip Technology

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PM-MOSFET-SIC-BL3

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Mfr	Microchip Technology
Series	-
Package	Bulk
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	560W
Configuration	4 N-Channel, Common Source
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 6mA
Base Product Number	MSCSM120
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	16mOhm @ 80A, 20V
Supplier Device Package	-
Gate Charge (Qg) (Max) @ Vgs	464nC @ 20V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C	150A