Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTQ34N65X2M

IXYS

Product No:

IXTQ34N65X2M

Manufacturer:

Package:

TO-3P

Batch:

Datasheet:

Description:

DISCRETE MOSFET 34A 650V X2 TO3P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	IXYS
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	96mOhm @ 17A, 10V
Power Dissipation (Max)	43W (Tc)
Supplier Device Package	TO-3P
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)