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IXTQ200N10T

IXYS

Product No:

IXTQ200N10T

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Package:

TO-3P

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Description:

MOSFET N-CH 100V 200A TO3P

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Mfr	IXYS
Series	Trench
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Base Product Number	IXTQ200
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	5.5mOhm @ 50A, 10V
Power Dissipation (Max)	550W (Tc)
Supplier Device Package	TO-3P
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	9400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)