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IXTF6N200P3

IXYS

Product No:

IXTF6N200P3

Manufacturer:

IXYS

Package:

ISOPLUS i4-PAC™

Batch:

-

Datasheet:

Description:

MOSFET N-CH 2000V 4A I4PAC

Quantity:

Delivery:

Payment:

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IXTF6N200P3 - Product Information

Parameter Info

User Guide

Mfr IXYS
Series Polar P3™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case ISOPLUSi5-Pak™
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Base Product Number IXTF6
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.2Ohm @ 3A, 10V
Power Dissipation (Max) 215W (Tc)
Supplier Device Package ISOPLUS i4-PAC™
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Drain to Source Voltage (Vdss) 2000 V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)