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IXTD1R4N60P 11

IXYS

Product No:

IXTD1R4N60P 11

Manufacturer:

IXYS

Package:

Die

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 1.4A DIE

Quantity:

Delivery:

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IXTD1R4N60P 11 - Product Information

Parameter Info

User Guide

Mfr IXYS
Series PolarHV™
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case Die
Product Status Obsolete
Vgs(th) (Max) @ Id 5.5V @ 25µA
Base Product Number IXTD1R4
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package Die
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)