Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA3N100D2

IXYS

Product No:

IXTA3N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

-

Datasheet:

Description:

MOSFET N-CH 1000V 3A TO263

Quantity:

Delivery:

Payment:

In Stock : 304

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.415

    $5.415

  • 10

    $4.8621

    $48.621

  • 100

    $3.983825

    $398.3825

  • 500

    $3.391329

    $1695.6645

  • 1000

    $2.860156

    $2860.156

  • 2000

    $2.717152

    $5434.304

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IXTA3N100D2 - Product Information

Parameter Info

User Guide

Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature Depletion Mode
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id -
Base Product Number IXTA3
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package TO-263AA
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V
Drain to Source Voltage (Vdss) 1000 V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 3A (Tc)