Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTA1R6N100D2

IXYS

Product No:

IXTA1R6N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

-

Datasheet:

Description:

MOSFET N-CH 1000V 1.6A TO263

Quantity:

Delivery:

Payment:

In Stock : 150

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.9545

    $2.9545

  • 10

    $2.6524

    $26.524

  • 100

    $2.17303

    $217.303

  • 500

    $1.84984

    $924.92

  • 1000

    $1.560109

    $1560.109

  • 2000

    $1.482104

    $2964.208

  • 5000

    $1.426387

    $7131.935

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IXTA1R6N100D2 - Product Information

Parameter Info

User Guide

Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature Depletion Mode
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id -
Base Product Number IXTA1
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package TO-263AA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Drain to Source Voltage (Vdss) 1000 V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)