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IXFY8N65X2

IXYS

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IXFY8N65X2

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Package:

TO-252AA

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Description:

MOSFET N-CH 650V 8A TO252AA

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Mfr	IXYS
Series	HiPerFET™, Ultra X2
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Base Product Number	IXFY8N65
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	450mOhm @ 4A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	TO-252AA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)