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IXFT18N100Q3

IXYS

Product No:

IXFT18N100Q3

Manufacturer:

IXYS

Package:

TO-268AA

Batch:

-

Datasheet:

Description:

MOSFET N-CH 1000V 18A TO268

Quantity:

Delivery:

Payment:

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IXFT18N100Q3 - Product Information

Parameter Info

User Guide

Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Product Status Active
Vgs(th) (Max) @ Id 6.5V @ 4mA
Base Product Number IXFT18
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 660mOhm @ 9A, 10V
Power Dissipation (Max) 830W (Tc)
Supplier Device Package TO-268AA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Drain to Source Voltage (Vdss) 1000 V
Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)