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IRFD321

Harris Corporation

Product No:

IRFD321

Manufacturer:

Harris Corporation

Package:

4-DIP, Hexdip

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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IRFD321 - Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.8Ohm @ 250mA, 10V
Power Dissipation (Max) 1W (Tc)
Supplier Device Package 4-DIP, Hexdip
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 350 V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)