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IRF8910GPBF

Infineon Technologies

Product No:

IRF8910GPBF

Manufacturer:

Infineon Technologies

Package:

8-SO

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 20V 10A 8-SO

Quantity:

Delivery:

Payment:

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IRF8910GPBF - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series HEXFET®
Package Tube
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 2W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Obsolete
Vgs(th) (Max) @ Id 2.55V @ 250µA
Base Product Number IRF89
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Supplier Device Package 8-SO
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A