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IRF233

Harris Corporation

Product No:

IRF233

Manufacturer:

Harris Corporation

Package:

TO-3

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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IRF233 - Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V
Power Dissipation (Max) 75W (Tc)
Supplier Device Package TO-3
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 150 V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)