Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRD3CH11DB6

Infineon Technologies

Product No:

IRD3CH11DB6

Manufacturer:

Package:

Die

Batch:

Datasheet:

Description:

DIODE GEN PURP 1.2KV 25A DIE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Bulk
Technology	Standard
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Obsolete
Base Product Number	IRD3CH11
Capacitance @ Vr, F	-
Supplier Device Package	Die
Reverse Recovery Time (trr)	190 ns
Current - Reverse Leakage @ Vr	700 nA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	25A
Operating Temperature - Junction	-40°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	2.7 V @ 25 A