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IRD3CH101DB6

Infineon Technologies

Product No:

IRD3CH101DB6

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Package:

Die

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Description:

DIODE GEN PURP 1.2KV 200A DIE

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Mfr	Infineon Technologies
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Bulk
Technology	Standard
Mounting Type	Surface Mount
Package / Case	Die
Product Status	Obsolete
Base Product Number	IRD3CH101
Capacitance @ Vr, F	-
Supplier Device Package	Die
Reverse Recovery Time (trr)	360 ns
Current - Reverse Leakage @ Vr	3.6 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	200A
Operating Temperature - Junction	-40°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	2.7 V @ 200 A