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Infineon Technologies
Product No:
IPG20N10S4L35ATMA1
Manufacturer:
Package:
PG-TDSON-8-4
Batch:
-
Datasheet:
-
Description:
MOSFET 2N-CH 8TDSON
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.197
$1.197
10
$1.06875
$10.6875
100
$0.833055
$83.3055
500
$0.688199
$344.0995
1000
$0.543314
$543.314
2000
$0.5071
$1014.2
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Mfr | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package | Tape & Reel (TR) |
Technology | MOSFET (Metal Oxide) |
FET Feature | Logic Level Gate |
Power - Max | 43W |
Configuration | 2 N-Channel (Dual) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.1V @ 16µA |
Base Product Number | IPG20N |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
Supplier Device Package | PG-TDSON-8-4 |
Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A |