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IPG20N10S4L22ATMA1

Infineon Technologies

Product No:

IPG20N10S4L22ATMA1

Manufacturer:

Package:

PG-TDSON-8-4

Batch:

Datasheet:

Description:

MOSFET 2N-CH 8TDSON

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Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	Logic Level Gate
Power - Max	60W
Configuration	2 N-Channel (Dual)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 25µA
Base Product Number	IPG20N
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	22mOhm @ 17A, 10V
Supplier Device Package	PG-TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	1755pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A