Home / FET, MOSFET Arrays / IPG20N06S2L-35AATMA1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPG20N06S2L-35AATMA1

Infineon Technologies

Product No:

IPG20N06S2L-35AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-10

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IPG20N06S2L-35AATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 65W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 27µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 35mOhm @ 15A, 10V
Supplier Device Package PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 55V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)