Home / Single Diodes / IDH10G65C5XKSA2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IDH10G65C5XKSA2

Infineon Technologies

Product No:

IDH10G65C5XKSA2

Manufacturer:

Infineon Technologies

Package:

PG-TO220-2-1

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 10A TO220-1

Quantity:

Delivery:

Payment:

In Stock : 2619

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.56

    $4.56

  • 10

    $3.8323

    $38.323

  • 100

    $3.100515

    $310.0515

  • 500

    $2.755988

    $1377.994

  • 1000

    $2.359819

    $2359.819

  • 2000

    $2.222022

    $4444.044

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IDH10G65C5XKSA2 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series CoolSiC™+
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number IDH10G65
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2-1
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A