Home / Single Diodes / IDH04G65C5XKSA2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IDH04G65C5XKSA2

Infineon Technologies

Product No:

IDH04G65C5XKSA2

Manufacturer:

Infineon Technologies

Package:

PG-TO220-2-1

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 4A TO220-2-1

Quantity:

Delivery:

Payment:

In Stock : 2227

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.1375

    $2.1375

  • 10

    $1.7746

    $17.746

  • 100

    $1.41246

    $141.246

  • 500

    $1.195138

    $597.569

  • 1000

    $1.014058

    $1014.058

  • 2000

    $0.963357

    $1926.714

  • 5000

    $0.927134

    $4635.67

  • 10000

    $0.896448

    $8964.48

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IDH04G65C5XKSA2 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series CoolSiC™+
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number IDH04G65
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2-1
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 70 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A