Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HN4B102J(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

HN4B102J(TE85L,F)

Package:

SMV

Batch:

-

Datasheet:

-

Description:

PB-F POWER TRANSISTOR SMV MOQ=30

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

HN4B102J(TE85L,F) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 750mW
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Product Status Active
Transistor Type NPN, PNP
Base Product Number HN4B102
Operating Temperature 150°C (TJ)
Frequency - Transition -
Supplier Device Package SMV
Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector (Ic) (Max) 1.8A, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
Voltage - Collector Emitter Breakdown (Max) 30V