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HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

Product No:

HN1B01FU-Y(L,F,T)

Package:

US6

Batch:

-

Datasheet:

-

Description:

TRANS NPN/PNP 50V 0.15A US6

Quantity:

Delivery:

Payment:

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HN1B01FU-Y(L,F,T) - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Transistor Type NPN, PNP
Base Product Number HN1B01
Operating Temperature 125°C (TJ)
Frequency - Transition 120MHz
Supplier Device Package US6
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector (Ic) (Max) 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max) 50V