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HN1B01FU-GR,LF

Toshiba Semiconductor and Storage

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HN1B01FU-GR,LF

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Package:

US6

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Description:

TRANS NPN/PNP 50V 0.15A US6-PLN

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	200mW, 210mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Product Status	Active
Transistor Type	NPN, PNP
Base Product Number	HN1B01
Operating Temperature	125°C (TJ)
Frequency - Transition	150MHz
Supplier Device Package	US6
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)	150mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)	50V