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HER308G

Taiwan Semiconductor Corporation

Product No:

HER308G

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Package:

DO-201AD

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Description:

DIODE GEN PURP 1KV 3A DO201AD

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Mfr	Taiwan Semiconductor Corporation
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Cut Tape (CT)
Technology	Standard
Mounting Type	Through Hole
Package / Case	DO-201AD, Axial
Product Status	Active
Base Product Number	HER308
Capacitance @ Vr, F	35pF @ 4V, 1MHz
Supplier Device Package	DO-201AD
Reverse Recovery Time (trr)	75 ns
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	3A
Operating Temperature - Junction	-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A