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H7N1002LS-E

Renesas Electronics America Inc

Product No:

H7N1002LS-E

Package:

LDPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 75A 4LDPAK

Quantity:

Delivery:

Payment:

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H7N1002LS-E - Product Information

Parameter Info

User Guide

Mfr Renesas Electronics America Inc
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SC-83
Product Status Active
Vgs(th) (Max) @ Id -
Base Product Number H7N1002
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 37.5A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package LDPAK
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 75A (Ta)