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Goford Semiconductor
Product No:
GT110N06D5
Manufacturer:
Package:
8-DFN (4.9x5.75)
Batch:
-
Description:
N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.8265
$0.8265
10
$0.71725
$7.1725
100
$0.496565
$49.6565
500
$0.414884
$207.442
1000
$0.353096
$353.096
2000
$0.314478
$628.956
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Mfr | Goford Semiconductor |
Series | GT |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 14A, 10V |
Power Dissipation (Max) | 69W (Tc) |
Supplier Device Package | 8-DFN (4.9x5.75) |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 1202 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |