Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GAN3R2-100CBEAZ

Nexperia USA Inc.

Product No:

GAN3R2-100CBEAZ

Manufacturer:

Package:

8-WLCSP (3.5x2.13)

Batch:

Datasheet:

Description:

100 V, 3.2 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

Payment:

In Stock : 1379

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+6V, -4V
Technology	GaNFET (Gallium Nitride)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-XFBGA, WLCSP
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 9mA
Base Product Number	GAN3R2
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	3.2mOhm @ 25A, 5V
Power Dissipation (Max)	394W
Supplier Device Package	8-WLCSP (3.5x2.13)
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	60A